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                10.9】題目:First-principles Band Structure Engineering and Defect Control in Semiconductors
                報告人:魏蘇淮 教授
                 
                2021-09-30 | 文章來源:材料設計與計∩算研究部        【 】【打印】【關閉

                報告題目:First-principles Band Structure Engineering and Defect Control in Semiconductors

                報告人:魏蘇淮 教授(北京計∞算科學研究中心)

                報告時間:2021年10月9日(周六),上午9:00-11:00

                報告地點:師昌緒樓403會議室

                First-principles Band Structure Engineering and Defect Control in Semiconductors
                Su-Huai Wei

                Beijing Computational Science Research Center, Beijing 100193, China

                First-principles study of semiconductor materials plays an important role in developing clean energy and information technologies because it can provide useful physical insights, fresh perspective and new design principles for developing innovative semiconductor materials with high performance. One of the most important issues in studying semiconductor material is to accurately calculate its band structure, predict its defect properties, and continuously tune its material properties, e.g., through alloying. In this talk,I will discuss how the development of theoretical first-principles calculation methods can be used to better understand and improve the performance of semiconductor materials.

                 

                魏蘇淮簡介:

                  魏蘇淮教授現任北京計算未必就能醒過來科學研究中心講席黑龍教授、材料與能源研究部主任,國家特聘專家,國家重點專項首】席科學家,國家基金委重大項目負責人,美國物理學會會士(APS Fellow),美護宗大陣國材料學會會士(MRS Fellow)。1981年本科畢業於復旦大學,1985年在美國威廉瑪麗學→院取得理學博士學位,1985年-2015年,在美國可再生能源國家實驗就在易水寒他們化為冰雕之時室(NREL)歷任博士後、科學家、資深科學家、首席科學家、理論研究室主⊙任,實驗室Fellow。在半導體能帶理論、缺陷與連續一個星期合金物理、能源與光電材料設計、計算方法等方面取得了系統的原創性成果。已發表SCI論文520余篇,包括72篇PRL。論文引用60000多次,H因子123。

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